Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-04-30
2000-08-15
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438253, 438396, 438398, 438690, 438964, H01L 218242
Patent
active
061035718
ABSTRACT:
The present invention discloses a method for forming a DRAM capacitor that has improved charge capacitance which can be carried out by first depositing an oxide layer on a semiconducting substrate, forming an uneven surface on the oxide layer, forming a capacitor node in the oxide layer to expose the substrate, depositing a polysilicon layer on top of the oxide layer and in the node such that the uneven surface on the oxide layer is substantially reproduced in a top surface of the polysilicon layer, depositing a dielectric layer and a second polysilicon layer sequentially on top of the first polysilicon layer to reproduce the uneven surface on the oxide layer, and then defining the DRAM capacitor.
REFERENCES:
patent: 5573973 (1996-11-01), Sethi et al.
patent: 5879988 (1999-03-01), Chen et al.
patent: 5937294 (1999-08-01), Sandhu et al.
Chen L. C.
Li M. Y.
Mii Y. J.
Jr. Carl Whitehead
Taiwan Semiconductor Manufacturing Company , Ltd.
Thomas Toniae M.
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