Method for fabricating split gate transistor device having...

Details Method for fabricating split gate transistor device having... Method for fabricating split gate transistor device having...

2005-12-27

2005-12-27

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S785000

Reexamination Certificate

active

06979623

ABSTRACT:
Methods and systems are disclosed that facilitate semiconductor fabrication by fabricating transistor devices having gate dielectrics with selectable thicknesses in different regions of semiconductor devices. The thicknesses correspond to operating voltages of the corresponding transistor devices. Furthermore, the present invention also provides systems and methods that can fabricate the gate dielectrics with high-k dielectric material, which allows a thicker gate dielectric than conventional silicon dioxide.

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