Method for fabricating an integrated gate dielectric layer...

Details Method for fabricating an integrated gate dielectric layer... Method for fabricating an integrated gate dielectric layer...

2006-07-31

2009-10-13

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S287000, C257SE21409

Reexamination Certificate

active

07601648

ABSTRACT:
Methods for forming a integrated gate dielectric layer on a substrate are provided. In one embodiment, the method includes forming a silicon oxide layer on a substrate, plasma treating the silicon oxide layer, depositing a silicon nitride layer on the silicon oxide layer by an ALD process, and thermal annealing the substrate. In another embodiment, the method includes precleaning a substrate, forming a silicon oxide layer on the substrate, plasma treating the silicon oxide layer, depositing a silicon nitride layer on the silicon oxide layer by an ALD process, and thermal annealing the substrate, wherein the formed silicon oxide layer and the silicon nitride layer has a total thickness less than 30 Å utilized as a gate dielectric layer in a gate structure.

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