Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2007-09-04
2007-09-04
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C257S649000, C438S792000
Reexamination Certificate
active
11091756
ABSTRACT:
A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to collimated electro-magnetic (EM) radiation to anisotropically expose the film. The EM radiation can have a component having a wavelength less than about 500 nm. The EM source can include a multi-frequency source of radiation.
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Leusink Gert
Masonobu Igeta
Waida Cory
DLA Piper (US) LLP
Jr. Carl Whitehead
Rodgers Colleen E.
Tokyo Electron Ltd.
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