Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-12-05
2006-12-05
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C118S719000
Reexamination Certificate
active
07144826
ABSTRACT:
The aim of the invention is the simple and economical production of a hydrogen-rich process gas from water vapour and hydrogen, whereby the proportion of water vapour to hydrogen may be precisely controllable and reproducible. Said aim is achieved, with a method and device for the production of a process gas for the treatment of substrates, in particular semiconductor substrates, in which the oxygen for formation of a process gas, comprising water vapour and hydrogen, is burnt in a hydrogen-rich environment in a combustion chamber.
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Erlikh Genrih
Mader Roland
Pashut Yehuda
Roters Georg
Sommer Helmut
Dority & Manning P.A.
Mattson Thermal Products
Smoot Stephen W.
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