Method and apparatus for the production of process gas that...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate

Reexamination Certificate

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C118S719000

Reexamination Certificate

active

07144826

ABSTRACT:
The aim of the invention is the simple and economical production of a hydrogen-rich process gas from water vapour and hydrogen, whereby the proportion of water vapour to hydrogen may be precisely controllable and reproducible. Said aim is achieved, with a method and device for the production of a process gas for the treatment of substrates, in particular semiconductor substrates, in which the oxygen for formation of a process gas, comprising water vapour and hydrogen, is burnt in a hydrogen-rich environment in a combustion chamber.

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