Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-29
2008-04-29
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S217000, C438S218000, C438S305000, C438S353000, C438S514000, C438S524000, C257SE21431, C257SE21507
Reexamination Certificate
active
07364957
ABSTRACT:
A semiconductor device with improved source/drain junctions and methods for fabricating the device are disclosed. A preferred embodiment comprises a MOS transistor with a gate structure overlying a substrate, lightly doped source/drain regions formed in the substrate aligned to the gate structure, sidewall spacers formed on the sidewalls of the gate structure and overlying the lightly doped source/drain regions, deeper source/drain diffusions formed into the substrate aligned to the sidewall spacers and additional pocket implants of source/drain dopants formed at the boundary of the deeper source/drain diffusions and the substrate. In a preferred method, the additional pocket implants are formed using an angled ion implant with the angle being between 4 and 45 degrees from vertical. Additional embodiments include recesses formed in the source/drain regions and methods for forming the recesses.
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Cheng Chung Long
Chuang Harry
Thei Kong-Beng
Ahmadi Mohsen
Lebentritt Michael
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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