Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2008-05-20
2008-05-20
Tran, Binh X. (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S068000, C216S069000, C216S073000, C438S715000
Reexamination Certificate
active
07374696
ABSTRACT:
The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.
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Davis Matthew Fenton
Kawaguchi Mark N.
Papanu James S.
Williams Scott
Applied Materials Inc.
Moser IP Law Group
Tran Binh X.
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