Method and apparatus for removing a halogen-containing residue

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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C216S068000, C216S069000, C216S073000, C438S715000

Reexamination Certificate

active

07374696

ABSTRACT:
The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.

REFERENCES:
patent: 5306671 (1994-04-01), Ogawa et al.
patent: 5545289 (1996-08-01), Chen et al.
patent: 6133102 (2000-10-01), Wu
patent: 6171981 (2001-01-01), Byun
patent: 6204203 (2001-03-01), Narwankar et al.
patent: 6265297 (2001-07-01), Powell
patent: 6331380 (2001-12-01), Ye et al.
patent: 6521003 (2003-02-01), Swanepoel et al.
patent: 6562713 (2003-05-01), Belyansky et al.
patent: 6774045 (2004-08-01), Liu et al.
patent: 2004/0007561 (2004-01-01), Nallan et al.

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