Method and apparatus for reducing the first wafer effect

Details Method and apparatus for reducing the first wafer effect Method and apparatus for reducing the first wafer effect

1997-02-03

2000-10-31

Meeks, Timothy

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419217, 438679, 438680, 438685, 438688, 4272481, 427250, C23C 1434

Patent

active

061396982

ABSTRACT:
A method and apparatus are provided for reducing and eliminating the First Wafer Effect. Specifically, in a method, or system that employs a separate hot chamber for hot deposition of material that may result in the First Wafer Effect (FWE material), a cold layer of the FWE material is deposited within the hot deposition chamber prior to deposition of the hot FWE material layer.

REFERENCES:
patent: 4994162 (1991-02-01), Armstrong et al.
patent: 5358616 (1994-10-01), Ward
patent: 5527438 (1996-06-01), Tepman
Aluminum Planarization for Advanced Via Application, European Semiconductor, pp. 993-998, Feb. 1996.
Aluminum Planarization for Advanced Via Applications, European Semiconductor, Feb. 1996.
Search and Examination Report Dated May 21, 1999.

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