Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-06-06
2006-06-06
Nelms, David (Department: 2818)
Static information storage and retrieval
Read/write circuit
Precharge
C365S218000
Reexamination Certificate
active
07057949
ABSTRACT:
Methods and apparatus are disclosed for erasing a core memory cell using a negative gate voltage in a semiconductor memory device, wherein negative pump MOS regulation capacitors are pre-charged according to a pre-charge signal during a core cell erase operation. A negative voltage pump is then regulated using the pre-charged negative pump MOS regulation capacitors to provide the negative gate voltage. Apparatus is disclosed for pre-charging negative pump MOS regulation capacitors during a core cell erase operation in a memory device, which comprises a switch connected between a reference voltage and the negative pump MOS regulation capacitors, and a pre-charge control circuit providing a pre-charge signal to the switch to selectively connect the reference voltage to the negative pump MOS regulation capacitors for pre-charging thereof in an erase operation.
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Bautista, Jr. Edward V.
Lee Weng Fook
Pan Feng
Yachareni Santosh K.
Advanced Micro Devices , Inc.
Esachweiler & Associates, LLC
Le Thong
Nelms David
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