Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Patent
1998-03-02
2000-03-14
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
438787, H01L 2102
Patent
active
060372737
ABSTRACT:
A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.
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Very thin oxide film on a silicon surface by ultraclean oxidation; Dept of Electronic Engineering, Faculty of Engineering, Tohoku University Sendai 980, Japan; 1992 American Insitute of Physics.
Gronet Christian M.
Knoot Peter A.
Kuppurao Satheesh
Lopes David R.
Miner Gary E.
Applied Materials Inc.
Bowers Charles
Sulsky Martin
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