Method and apparatus for in-situ monitoring of thickness during

Details Method and apparatus for in-situ monitoring of thickness during Method and apparatus for in-situ monitoring of thickness during

1997-05-28

2000-08-22

Pham, Hoa Q.

Optics: measuring and testing

By configuration comparison

With photosensitive film or plate

356369, 451 6, 451303, G01B 1106, B24B 4900

Patent

active

061080918

ABSTRACT:
An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

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