Method and apparatus for in-situ monitoring of plasma etch and d

Details Method and apparatus for in-situ monitoring of plasma etch and d Method and apparatus for in-situ monitoring of plasma etch and d

1999-09-30

2000-12-12

Evans, F. L.

Optics: measuring and testing

By configuration comparison

With photosensitive film or plate

25055927, 356 72, G01B 1106

Patent

active

061606219

ABSTRACT:
An interferometric method and apparatus for in-situ monitoring of a thin film thickness and of etch and deposition rates using a pulsed flash lamp providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph used for detecting light reflected from a wafer is substantially transmissive to the ultraviolet range of the spectrum making available to the software algorithms operable to calculate film thickness and etch and deposition rates desirable wavelengths.

REFERENCES:
patent: 5880823 (1999-03-01), Lu

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