Method and apparatus for forming planar alloy deposits on a...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S622000, C257SE21658

Reexamination Certificate

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07867842

ABSTRACT:
A method for forming alloy deposits at selected areas on a receiving substrate includes the steps of: providing an alloy carrier including at least a first decal including a first plurality of openings and a second decal including a second plurality of openings, the first and second decals being arranged such that each of the first plurality of openings is in alignment with a corresponding one of the second plurality of openings; filling the first and second plurality of openings with molten alloy; cooling the molten alloy to thereby form at least first and second plugs, the first plug having a first surface and a second surface substantially parallel to one another, the second plug having a third surface and a fourth surface substantially parallel to one another; removing at least one of the first and second decals to at least partially expose the first and second plugs; aligning the alloy carrier with the receiving substrate so that the first and second plugs correspond to the selected areas on the receiving substrate; and transferring the first plug to a first of the selected areas and the second plug to a second of the selected areas.

REFERENCES:
patent: 4412642 (1983-11-01), Fisher, Jr.
patent: 5244143 (1993-09-01), Ference et al.
patent: 5673846 (1997-10-01), Gruber
patent: 5853517 (1998-12-01), Petefish et al.
patent: 6166433 (2000-12-01), Takashima et al.
patent: 6276596 (2001-08-01), Gruber et al.
patent: 7332424 (2008-02-01), Bélanger et al.
patent: 2002/0110328 (2002-08-01), Bischel et al.

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