Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-11
2011-01-11
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S622000, C257SE21658
Reexamination Certificate
active
07867842
ABSTRACT:
A method for forming alloy deposits at selected areas on a receiving substrate includes the steps of: providing an alloy carrier including at least a first decal including a first plurality of openings and a second decal including a second plurality of openings, the first and second decals being arranged such that each of the first plurality of openings is in alignment with a corresponding one of the second plurality of openings; filling the first and second plurality of openings with molten alloy; cooling the molten alloy to thereby form at least first and second plugs, the first plug having a first surface and a second surface substantially parallel to one another, the second plug having a third surface and a fourth surface substantially parallel to one another; removing at least one of the first and second decals to at least partially expose the first and second plugs; aligning the alloy carrier with the receiving substrate so that the first and second plugs correspond to the selected areas on the receiving substrate; and transferring the first plug to a first of the selected areas and the second plug to a second of the selected areas.
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Gruber Peter Alfred
Lauro Paul Alfred
Nah Jae-Woong
Garber Charles D
International Business Machines - Corporation
Isaac Stanetta D
Morris Daniel P.
Ryan & Mason & Lewis, LLP
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