Masked ion implant with fast-slow scan

Details Masked ion implant with fast-slow scan Masked ion implant with fast-slow scan

2011-08-30

2011-08-30

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S308000, C438S378000, C438S514000, C438S795000

Reexamination Certificate

active

08008176

ABSTRACT:
An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.

REFERENCES:
patent: 7727866 (2010-06-01), Bateman et al.
patent: 7820460 (2010-10-01), Sullivan et al.
patent: 2009/0011345 (2009-01-01), Tinnemans et al.
patent: 2009/0308439 (2009-12-01), Adibi et al.
patent: 2009/0308440 (2009-12-01), Adibi et al.
patent: 2009/0308450 (2009-12-01), Adibi et al.
patent: 2009/0309039 (2009-12-01), Adibi et al.
patent: 2009/0317937 (2009-12-01), Gupta et al.
patent: 2010/0097586 (2010-04-01), Kuit et al.
patent: 2010/0323508 (2010-12-01), Adibi et al.
patent: 2011/0092059 (2011-04-01), Daniels et al.
Masayoshi Hino et al., High Productivity Implantation “Partial Implant,” Ion Implantation Technology, 2008, pp. 312-315, American Institute of Physics.

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