Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-16
2008-11-11
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000, C438S305000, C438S306000, C257SE21437, C257SE21345
Reexamination Certificate
active
07449386
ABSTRACT:
A method of manufacturing a plurality of MOS transistors includes forming gate structures in first and second regions on a substrate and forming mask portions only between adjacent drain sides of the respective gate structures only in the first region. Dopant of a first conductivity type that is the same as that of the substrate, is implanted at first and second angles in both the first and second regions to form halo regions only in source sides under the gate structures in the first region and in both source and drain sides under the gate structures in the second region.
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Lee Di-Houng
Lin Chung-Te
See Yee-Chaung
Finnegan Henderson Farabow Garrett & Dunner LLP
Huynh Andy
Taiwan Semiconductor Manufacturing Company , Ltd.
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