Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-07
2007-08-07
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S687000
Reexamination Certificate
active
10905230
ABSTRACT:
A method to electrolessly plate a CoWP alloy on copper in a reproducible manner that is effective for a manufacturable process. In the method, a seed layer of palladium (Pd) is deposited on the copper by an aqueous seeding solution of palladium acetate, acetic acid and chloride. Thereafter, a complexing solution is applied to remove any Pd ions which are adsorbed on surfaces other than the copper. Finally, a plating solution of cobalt (Co), tungsten (W) and phosphorous (P) is applied to the copper so as to deposit a layer of CoWP on the Pd seed and copper.
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Canaperi Donald F.
Fluegel James E.
Henry Richard O.
Krishnan Mahadevaiyer
Restaino Darryl D.
Blecker Ira D.
International Business Machines - Corporation
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