Magnetically-enhanced plasma chamber with non-uniform magnetic f

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118723MA, 31511141, C23F 102

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active

061137316

ABSTRACT:
A plasma chamber having a magnet which produces a magnetic field such that, within a region parallel to and adjacent to the workpiece, the direction of the magnetic field is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field, and (ii) a vector extending perpendicularly from the workpiece surface toward the plasma. Alternatively, the plasma chamber includes a north magnetic pole and a south magnetic pole located at distinct azimuths around the periphery of the workpiece. The azimuth of the south magnetic pole relative to the north magnetic pole is clockwise around the central axis, and each magnetic pole faces a direction which is more toward than away from a central axis of the workpiece area. An additional aspect of the invention is a plasma chamber having a rotating magnetic field produced by electromagnets spaced around the periphery of the workpiece which receive successive fixed amounts of electrical current during successive time intervals. During each transition between the time intervals, the current supplied to each electromagnet is changed relatively slowly or relatively quickly according to whether the current change includes a change in polarity.

REFERENCES:
patent: 4631106 (1986-12-01), Nakazato et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4668365 (1987-05-01), Foster et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 4829215 (1989-05-01), Kim et al.
patent: 5074456 (1991-12-01), Degner et al.
patent: 5213658 (1993-05-01), Ishida
patent: 5215619 (1993-06-01), Cheng et al.
patent: 5225024 (1993-07-01), Hanley et al.
patent: 5252178 (1993-10-01), Moslehi
patent: 5271788 (1993-12-01), Hasegawa et al.
patent: 5292399 (1994-03-01), Lee et al.
patent: 5298465 (1994-03-01), Levy
patent: 5308417 (1994-05-01), Groechel et al.
patent: 5320704 (1994-06-01), Horioka et al.
patent: 5330607 (1994-07-01), Nowicki
patent: 5423918 (1995-06-01), Gupta et al.
patent: 5440206 (1995-08-01), Kurono et al.
patent: 5444207 (1995-08-01), Sekine et al.
patent: 5449977 (1995-09-01), Nakagawa et al.
patent: 5474649 (1995-12-01), Kava et al.
patent: 5484486 (1996-01-01), Blackburn et al.
patent: 5534108 (1996-07-01), Qian et al.
patent: 5552124 (1996-09-01), Su
patent: 5556501 (1996-09-01), Collins et al.
patent: 5565738 (1996-10-01), Samukawa et al.
patent: 5573596 (1996-11-01), Yin
patent: 5673922 (1997-10-01), Sherstinsky et al.
patent: 5685914 (1997-11-01), Hills et al.
patent: 5740009 (1998-04-01), Pu et al.
H. Shan et al., "Process kit and wafer temperature effects on dielectric etch rate and uniformity of electrostatic chuck," Third International Workshop on Advanced Plasma Tools: Sources, Process Control and Diagnostics, May 4, 1995.
S. Fang & McVittie, "Model and experiments for thin oxide damage from wafer charging in magnetron plasmas," IEEE Electron Device Letters, vol. 13, No. 6, pp. 347-349, Jun. 1992.
S. Fang & McVittie, "Role of `antenna` structure on thin oxide damage from plasma induced wafer charging," Mat. Res. Soc. Symp. Proc., vol. 265, pp. 231-236, 1992.
S. Fang & McVittie, "Charging damage to gate oxides in O.sub.2 magnetron plasma," J. Appl. Phys., vol. 72, No. 10, pp. 4865-4872, Nov. 1992.
H. Shin et al., "Plasma etching charge-up damage to thin oxides," Solid State Technology, Aug. 1993, pp. 29-36.
S. Nakagawa et al., "Charge build-up and uniformity control in magnetically enhanced reactive ion etching using a curved lateral magnetic field", Jpn. J. Appl. Phys., vol. 33, part 1, No. 4B, pp. 2194-2199 (1994).
H. Shan et al., "Process kit and wafer temperature effects on dielectric etch rate and uniformity of electrostatic chuck", J. Vac. Sci. Tech. B, vol. 14, No. 1, Jan./Feb. 1996, pp. 521-526.

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