Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2007-11-13
2007-11-13
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S775000, C438S786000, C438S791000, C257SE21192, C257SE21267, C257SE21268, C257SE21293
Reexamination Certificate
active
11213449
ABSTRACT:
Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.
REFERENCES:
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4495218 (1985-01-01), Azuma et al.
patent: 4585671 (1986-04-01), Kitagawa et al.
patent: 4684542 (1987-08-01), Jasinski et al.
patent: 4720395 (1988-01-01), Foster
patent: 5214002 (1993-05-01), Hayashi et al.
patent: 5227329 (1993-07-01), Kobayashi et al.
patent: 5356673 (1994-10-01), Schmitt et al.
patent: 5356821 (1994-10-01), Naruse et al.
patent: 5389398 (1995-02-01), Suzuki et al.
patent: 5389570 (1995-02-01), Shiozawa
patent: 5453858 (1995-09-01), Yamazaki
patent: 5471330 (1995-11-01), Sarma
patent: 5591494 (1997-01-01), Sato et al.
patent: 5607724 (1997-03-01), Beinglass et al.
patent: 5614257 (1997-03-01), Beinglass et al.
patent: 5648293 (1997-07-01), Hayama et al.
patent: 5656531 (1997-08-01), Thakur et al.
patent: 5695819 (1997-12-01), Beinglass et al.
patent: 5698771 (1997-12-01), Shields et al.
patent: 5700520 (1997-12-01), Beinglass et al.
patent: 5786027 (1998-07-01), Rolfson
patent: 5789030 (1998-08-01), Rolfson
patent: 5837580 (1998-11-01), Thakur et al.
patent: 5849601 (1998-12-01), Yamazaki
patent: 5874129 (1999-02-01), Beinglass et al.
patent: 5876797 (1999-03-01), Beinglass et al.
patent: 5885869 (1999-03-01), Turner et al.
patent: 5959326 (1999-09-01), Aiso et al.
patent: 6027705 (2000-02-01), Kitsuno et al.
patent: 6083810 (2000-07-01), Obeng et al.
patent: 6103600 (2000-08-01), Ueda et al.
patent: 6159828 (2000-12-01), Ping et al.
patent: 6161498 (2000-12-01), Toraguchi et al.
patent: 6171662 (2001-01-01), Nakao
patent: 6197669 (2001-03-01), Twu et al.
patent: 6197694 (2001-03-01), Beinglass
patent: 6228181 (2001-05-01), Yamamoto et al.
patent: 6326311 (2001-12-01), Ueda et al.
patent: 6385020 (2002-05-01), Shin et al.
patent: 6455892 (2002-09-01), Okuno et al.
patent: 6503846 (2003-01-01), Niimi et al.
patent: 6551893 (2003-04-01), Zheng et al.
patent: 6613695 (2003-09-01), Pomarede et al.
patent: 6821825 (2004-11-01), Todd et al.
patent: 6962859 (2005-11-01), Todd et al.
patent: 7125582 (2006-10-01), McSwiney et al.
patent: 7172792 (2007-02-01), Wang et al.
patent: 7192626 (2007-03-01), Dussarrat et al.
patent: 2001/0032986 (2001-10-01), Miyasaka
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2003/0059535 (2003-03-01), Luo et al.
patent: 2004/0096582 (2004-05-01), Wang et al.
patent: 2005/0079692 (2005-04-01), Samoilov et al.
patent: 2005/0080286 (2005-04-01), Wang et al.
patent: 2005/0118837 (2005-06-01), Todd et al.
patent: 2006/0084283 (2006-04-01), Paranjpe et al.
patent: 0368651 (1990-05-01), None
patent: 0486047 (1992-05-01), None
patent: 0747974 (1996-12-01), None
patent: 1065728 (2001-01-01), None
patent: 2 298 313 (1996-08-01), None
patent: 2332564 (1999-06-01), None
patent: 59078919 (1982-01-01), None
patent: 57209810 (1982-12-01), None
patent: 59078918 (1984-05-01), None
patent: 60043485 (1985-03-01), None
patent: S60-43485 (1985-03-01), None
patent: 61153277 (1986-07-01), None
patent: 62076612 (1987-04-01), None
patent: 63003414 (1988-01-01), None
patent: 63003463 (1988-01-01), None
patent: 01217956 (1989-08-01), None
patent: 01268064 (1989-10-01), None
patent: 02155225 (1990-06-01), None
patent: H 02-155225 (1990-06-01), None
patent: 03091239 (1991-04-01), None
patent: H3-91239 (1991-04-01), None
patent: 03185817 (1991-08-01), None
patent: 03187215 (1991-08-01), None
patent: H3-185817 (1991-08-01), None
patent: H3-187215 (1991-08-01), None
patent: 03292741 (1991-12-01), None
patent: 04323834 (1992-11-01), None
patent: 05021378 (1993-01-01), None
patent: 05062911 (1993-03-01), None
patent: H5-62911 (1993-03-01), None
patent: 07249618 (1995-09-01), None
patent: 08242006 (1996-09-01), None
patent: 11317530 (1999-11-01), None
patent: WO 02/064853 (2002-08-01), None
patent: WO 2004/009861 (2004-01-01), None
Ikoma et al., Growth of Si/3C-SiC/Si(100) hetrostructures by pulsed supersonic free jets, Applied Physics Letters, vol. 75, No. 25, pp. 3977-3979, Dec. 1999.
Olivares, J. et al., “Solid-phase crystallization of amorphous SiGe films deposed by LPCVD on SiOs and glass,” Thin Solid Films 337 (1999), pp. 51-54.
International Search Report dated Nov. 13, 2003 for international patent application No. PCTUS02/02921, filed on Feb. 1, 2002.
International Search Report and Written Opinion for International Application No. PCT/US2006/047805. May 8, 2007.
Ishihara et al., “Low-temperature chemical-vapor-deposition of silicon-nitride from tetra-silane and hydrogen azide,”Materials Research Society Symposium Proceedings, vol. 284, pp. 3-8 (1983).
Yeh et al., “Low-temperature chemical-vapor-deposition of silicon-nitride film from hexachloro-disilane and hydrazine,”Jpn. J. Appl. Phys.vol. 35, part 1, No. 2B, pp. 1509-1512 (Feb. 1996).
Beulens Jacobus Johannes
De Blank Marinus J.
Haverkort Ruben
Pomarede Christophe F.
Todd Michael A.
ASM International N.V.
Knobbe Martens Olson & Bear LLP
Lebentritt Michael
Pompey Ron
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