Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-29
2011-03-29
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21422
Reexamination Certificate
active
07915114
ABSTRACT:
Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2plasma. After subjecting the gate metal to an H2plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.
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Seiichi Isomae et al., “Cavity Formation Due to Si3N4/SiO2 Film-Induced Stress in Silicon”, Jan. 1997,Journal of Electrochemical Society, vol. 144, No. 1, pp. 340-345.
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Chang Youn-Gyung
Harshbarger William R.
Hsiao Mark
Kim Woong-Kwon
Shang Quanyuan
Applied Materials Inc.
Coleman W. David
Stern Robert J.
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