Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-25
2007-09-25
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S622000, C438S623000, C438S624000, C438S625000, C438S626000, C438S627000, C257S738000, C257S758000
Reexamination Certificate
active
11030496
ABSTRACT:
Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.
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Angell David
Beaulieu Frederic
Hisada Takashi
Kelly Adreanne
McKnight Samuel Roy
Blecker Ira D.
Jr. Carl Whitehead
Mitchell James M
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