Internal gettering in SIMOX SOI silicon substrates

Details Internal gettering in SIMOX SOI silicon substrates Internal gettering in SIMOX SOI silicon substrates

2007-11-13

2007-11-13

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S471000, C438S476000, C257S347000, C257SE21537

Reexamination Certificate

active

10640917

ABSTRACT:
The present invention provides methods for forming SOI wafers having internal gettering layers for sequestering metallic impurities. More particularly, in one embodiment of the invention, a plurality of sites for sequestering metallic impurities are formed in a silicon substrate by implanting a selected dose of oxygen ions therein. In one embodiment, an epitaxial layer of crystalline silicon is formed over the substrate, and a buried continuous oxide layer is generated in the epitaxial layer, for example, by employing a SIMOX process.

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Campisi, et al., “Heavy Metal Gettering In Simox Using Implanted Carbon,” Extended Abstracts, Electrochemical Society, vol. 90-1, pp. 466-467, 1990.

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