Flash memory and fabrication method thereof

Details Flash memory and fabrication method thereof Flash memory and fabrication method thereof

2007-12-11

2007-12-11

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S383000, C438S299000, C257S331000, C257S059000, C257S368000

Reexamination Certificate

active

10747311

ABSTRACT:
A flash memory and a fabrication method thereof, which is capable of improving a whole capacitance of the flash memory by forming a tunneling oxide and a floating gate only in a portion where injection of electrons occurs. A flash memory wherein a tunneling oxide and a floating gate are formed only in a portion where injection of electrons occurs and a gate insulation film is formed on a semiconductor substrate between two portions of the tunneling oxide.

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Huang et al. (IEEE Transactions on Electron Devices, vol. 48, No. 5, May 2001).

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