Method for producing a semiconductor component and a...

Details Method for producing a semiconductor component and a... Method for producing a semiconductor component and a...

2007-12-11

2007-12-11

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C216S002000, C257SE21215

Reexamination Certificate

active

10486182

ABSTRACT:
In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

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Database WPI Section EI, Week 200038, Derwent Publications Ltd., London, GB, May 3, 2000.

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