Interlevel dielectric layer and metal layer sealing

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Reexamination Certificate

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10710706

ABSTRACT:
Methods for sealing an organic ILD layer and a metal layer after an etching step. The method includes etching through an ILD layer and leaving a remaining portion of an underlying metal layer cap, maintaining the device in an inert gas, and depositing at least a portion of a liner into the opening to seal the ILD layer and the metal layer. Subsequent processing may include formation of a via by etching through the portion of the liner and the remaining portion of the cap layer, and depositing a metal.

REFERENCES:
patent: 6399486 (2002-06-01), Chen et al.
patent: 6576546 (2003-06-01), Gilbert et al.
patent: 2004/0198055 (2004-10-01), Wang

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