Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2005-06-14
2005-06-14
Goudreau, George A. (Department: 1763)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S067000, C438S009000, C438S016000, C438S714000
Reexamination Certificate
active
06905624
ABSTRACT:
A method of etching a substrate includes placing a substrate in a process zone. The substrate has a material with a thickness, and the material has exposed regions between features of a patterned mask. An etchant gas is introduced into the process zone. The etchant gas is energized to etch the material. An endpoint of etching the material of the substrate is determined by (i) reflecting a light beam from the substrate, the light beam having a wavelength selected to have a coherence length in the substrate of from about 1.5 to about 4 times the thickness of the material, and (ii) detecting the reflected light beam to determine an endpoint of the substrate etching process. Additionally, the wavelength of the light beam can be selected to maximize an absorption differential that is a difference between the absorption of the light beam in the patterned mask and the absorption of the light beam in the material.
REFERENCES:
patent: 3612692 (1971-10-01), Kruppa et al.
patent: 3824017 (1974-07-01), Galyon
patent: 3874797 (1975-04-01), Kasai
patent: 3985447 (1976-10-01), Aspnes
patent: 4141780 (1979-02-01), Kleinknecht et al.
patent: 4147435 (1979-04-01), Habegger
patent: 4198261 (1980-04-01), Busta et al.
patent: 4208240 (1980-06-01), Latos
patent: 4317698 (1982-03-01), Christol et al.
patent: 4328068 (1982-05-01), Curtis
patent: 4367044 (1983-01-01), Booth, Jr. et al.
patent: 4454001 (1984-06-01), Sternheim et al.
patent: 4611919 (1986-09-01), Brooks, Jr. et al.
patent: 4618262 (1986-10-01), Maydan et al.
patent: 4838694 (1989-06-01), Betz et al.
patent: 4846928 (1989-07-01), Dolins et al.
patent: 4847792 (1989-07-01), Barna et al.
patent: 4861419 (1989-08-01), Flinchbaugh et al.
patent: 4927485 (1990-05-01), Cheng et al.
patent: 4953982 (1990-09-01), Ebbing et al.
patent: 4972072 (1990-11-01), Hauser et al.
patent: 5131752 (1992-07-01), Yu et al.
patent: 5151584 (1992-09-01), Ebbing et al.
patent: 5362356 (1994-11-01), Schoenborn
patent: 5450205 (1995-09-01), Sawin et al.
patent: 5503707 (1996-04-01), Maung et al.
patent: 5564830 (1996-10-01), Bobel et al.
patent: 5578161 (1996-11-01), Auda
patent: 5658418 (1997-08-01), Coronel et al.
patent: 5681424 (1997-10-01), Saito et al.
patent: 5756400 (1998-05-01), Ye et al.
patent: 5848088 (1998-12-01), Mori et al.
patent: 6081334 (2000-06-01), Grimbergen et al.
patent: 6165311 (2000-12-01), Collins et al.
patent: 6559942 (2003-05-01), Sui et al.
patent: 0511448 (1992-11-01), None
patent: 0709877 (1996-05-01), None
patent: 0753912 (1997-01-01), None
patent: 2293795 (1996-04-01), None
Maynard, et al., “Multiwavelength Ellipsometry for Real-time Process Control of the Plasma Etching of Patterned Samples.”J. Vac Sci Technol. B, 15(1), Jan./Feb. 1997, pp. 109-115.
Klemens, F.P., et al., “High Density Plasma Gate Etching of 0.12 μm Devices with Sub 1.5 nm Gate-Oxides.”Electrochemical Society Proceedings, vol. 97-30, pp. 85-95.
PCT International Search Report dated Sep. 2, 1999.
European Search Report dated Sep. 4, 2001, P.B. 5818- Patentlaan 2, 2280 HV Rijswijk (ZH), The Hague.
Frum Coriolan I.
Shan Hongqing
Sui Zhifeng
Applied Materials Inc.
Bach Joseph
Goudreau George A.
Janah & Associates
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