Interfacial oxidation process for high-k gate dielectric...

Details Interfacial oxidation process for high-k gate dielectric... Interfacial oxidation process for high-k gate dielectric...

2005-12-13

2005-12-13

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S770000

Reexamination Certificate

active

06974779

ABSTRACT:
A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.

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