Interconnect with recessed dielectric adjacent a noble metal...

Details Interconnect with recessed dielectric adjacent a noble metal... Interconnect with recessed dielectric adjacent a noble metal...

2009-01-09

2010-06-29

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000, C438S619000, C438S622000, C438S628000, C438S629000, C257SE21304, C257SE21576

Reexamination Certificate

active

07745324

ABSTRACT:
The invention comprises a copper interconnect structure that includes a noble metal cap with dielectric immediately adjacent the copper
oble metal cap interface recessed from the noble metal cap.

REFERENCES:
patent: 5098860 (1992-03-01), Chakravorty et al.
patent: 5930669 (1999-07-01), Uzoh
patent: 5933753 (1999-08-01), Simon et al.
patent: 6345665 (2002-02-01), Schulz-Harder
patent: 6383920 (2002-05-01), Wang et al.
patent: 6429519 (2002-08-01), Uzoh
patent: 6441492 (2002-08-01), Cunningham
patent: 6596640 (2003-07-01), Fishcer et al.
patent: 7008871 (2006-03-01), Andricacos et al.
patent: 7187085 (2007-03-01), Clevenger et al.
patent: 7253098 (2007-08-01), Chen et al.
patent: 7402883 (2008-07-01), Yang et al.
patent: 2002/0153554 (2002-10-01), Kajita et al.
patent: 2004/0130027 (2004-07-01), Chen et al.
patent: 2005/0064701 (2005-03-01), Dalton et al.
patent: 2006/0014380 (2006-01-01), Abe
patent: 2006/0019485 (2006-01-01), Komai et al.
patent: 2006/0073695 (2006-04-01), Filippi et al.
patent: 2007/0032062 (2007-02-01), Lee et al.
patent: 2007/0049007 (2007-03-01), Yang et al.
patent: 2007/0096319 (2007-05-01), Hsu et al.
patent: 2007/0117377 (2007-05-01), Yang et al.
patent: 2007/0158717 (2007-07-01), Edelstein et al.
patent: 2007/0161239 (2007-07-01), Murray et al.
patent: 2007/0194450 (2007-08-01), Tyberg et al.
patent: 2007/0196639 (2007-08-01), Gates et al.
patent: 2007/0205482 (2007-09-01), Yang et al.
patent: 2008/0242082 (2008-10-01), Yang et al.

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