Integration manufacturing process for MEMS device

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S048000, C438S052000

Reexamination Certificate

active

08030111

ABSTRACT:
A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

REFERENCES:
patent: 5919548 (1999-07-01), Barron et al.
patent: 6805454 (2004-10-01), Staker et al.
patent: 2004/0152229 (2004-08-01), Najafi et al.
patent: 2005/0205951 (2005-09-01), Eskridge
patent: 2006/0110854 (2006-05-01), Horning et al.
patent: 2006/0145793 (2006-07-01), Ning et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integration manufacturing process for MEMS device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integration manufacturing process for MEMS device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integration manufacturing process for MEMS device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4287574

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.