Integrated circuit devices having buried insulation layers...

Details Integrated circuit devices having buried insulation layers... Integrated circuit devices having buried insulation layers...

2006-07-25

2006-07-25

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29270

Reexamination Certificate

active

07081391

ABSTRACT:
An integrated circuit device includes a gate electrode formed on an active region of an integrated circuit device and on a field isolation layer adjacent to the active region. A source region and a drain region are in the active region on alternate sides of the gate electrode. At least one buried insulation layer is beneath the drain region or the source region.

REFERENCES:
patent: 6482714 (2002-11-01), Hieda et al.
patent: 6600170 (2003-07-01), Xiang
patent: 6906384 (2005-06-01), Yamada et al.
patent: 2004/0038488 (2004-02-01), Mouli
patent: 02-135781 (1990-05-01), None
patent: 1019970048109 (1999-04-01), None
patent: 100272507 (2000-08-01), None
Notice to File a Response/Amendment to the Examination Report for Korean patent application no. 10-2003-*0041211 mailed on May 30, 2005.

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