In-situ measurement of a thin film deposited on a wafer

Details In-situ measurement of a thin film deposited on a wafer In-situ measurement of a thin film deposited on a wafer

1992-05-14

1993-11-02

Rosenberger, Richard A.

Optics: measuring and testing

By configuration comparison

With photosensitive film or plate

356 43, 250339, 250342, 374 7, 374121, 374129, G01B 1106, G01J 500

Patent

active

052588246

ABSTRACT:
A method and apparatus is used to determine the thickness of a layer deposited on a specimen. For example, the thickness of a layer of polycrystalline may be measured as it is deposited over silicon oxide on a silicon wafer. The intensity of radiation emission at the top of the silicon wafer is detected. The temperature of the silicon wafer is measured and the variation in the intensity of radiation emission due to variation of the temperature is subtracted from the intensity of radiation emission detected at the top of the silicon wafer. The resultant signal is used to calculate the thickness of the polycrystalline silicon layer.

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"In-Process Thickness Monitor for Polycrystalline Silicon Deposition" T. I. Kamins and C. J. Dell'Oca, Journal Electrochemical Society, Jan., 1972, pp. 112-114.

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