Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-06-07
2005-06-07
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S788000, C438S694000, C438S714000, C438S478000, C438S703000
Reexamination Certificate
active
06903031
ABSTRACT:
A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011ions/cm3is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.
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Byun Jeong Soo
Karim M. Ziaul
Li DongQing
Pham Thanh N.
Anya Igwe U.
Applied Materials Inc.
Smith Matthew
Townsend and Townsend and Crew
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