Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-11-13
2007-11-13
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S788000, C438S778000, C257SE21279
Reexamination Certificate
active
11388657
ABSTRACT:
A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011ions/cm3is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.
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Byun Jeong Soo
Karim M. Ziaul
Li DongQing
Pham Thanh N.
Anya Igwe U.
Applied Materials Inc.
Baumeister B. William
Townsend and Townsend / and Crew LLP
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