Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2005-03-22
2005-03-22
Hiteshew, Felisa (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
C438S694000, C438S695000, C438S706000, C117S084000, C117S088000, C117S092000, C117S103000, C117S108000
Reexamination Certificate
active
06869880
ABSTRACT:
A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
REFERENCES:
patent: 4690746 (1987-09-01), McInerney et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4960488 (1990-10-01), Law et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5061838 (1991-10-01), Lane et al.
patent: 5089442 (1992-02-01), Olmer
patent: 5156881 (1992-10-01), Okano et al.
patent: 5252178 (1993-10-01), Moslehi
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5275977 (1994-01-01), Otsubo et al.
patent: 5279865 (1994-01-01), Chebi et al.
patent: 5290382 (1994-03-01), Zarowin et al.
patent: 5302233 (1994-04-01), Kim et al.
patent: 5319247 (1994-06-01), Matsuura
patent: 5362526 (1994-11-01), Wang et al.
patent: 5416048 (1995-05-01), Blalock et al.
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5571576 (1996-11-01), Qian et al.
patent: 5599740 (1997-02-01), Jang et al.
patent: 5624582 (1997-04-01), Cain
patent: 5679606 (1997-10-01), Wang et al.
patent: 5719085 (1998-02-01), Moon et al.
patent: 5850105 (1998-12-01), Lawson et al.
patent: 5858876 (1999-01-01), Chew
patent: 5872052 (1999-02-01), Iyer
patent: 5872058 (1999-02-01), Van Cleemput et al.
patent: 5891349 (1999-04-01), Tobe et al.
patent: 5913140 (1999-06-01), Roche et al.
patent: 5916190 (1999-06-01), Pirkle
patent: 5920792 (1999-07-01), Lin
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 5953635 (1999-09-01), Andideh
patent: 5968610 (1999-10-01), Liu et al.
patent: 5990000 (1999-11-01), Hong et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6037018 (2000-03-01), Jang et al.
patent: 6039851 (2000-03-01), Iyer
patent: 6059643 (2000-05-01), Hu et al.
patent: 6099697 (2000-08-01), Hausmann
patent: 6136685 (2000-10-01), Narwankar et al.
patent: 6150628 (2000-11-01), Smith et al.
patent: 6167834 (2001-01-01), Wang et al.
patent: 6170428 (2001-01-01), Redeker et al.
patent: 6182602 (2001-02-01), Redeker et al.
patent: 6189483 (2001-02-01), Ishikawa et al.
patent: 6191026 (2001-02-01), Rana et al.
patent: 6194038 (2001-02-01), Rossman
patent: 6197705 (2001-03-01), Vassiliev
patent: 6203863 (2001-03-01), Liu et al.
patent: 6335288 (2002-01-01), Kwan et al.
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 20010028922 (2001-10-01), Sandhu
patent: 2-58836 (1990-02-01), None
patent: 7-161703 (1995-06-01), None
U.S. Appl. No. 09/854,083, filed May 11, 2001, Tan et al.
V.Y., Vassilieuv et al., “Trends in void-free pre-metal CVD dielectrics,” Solid State Technology, pp. 129-136, www.solid-state.com, Mar. 2001.
U.S. Appl. No. 09/400,338, filed Sep. 21, 1999, Xia et al.
Abraham, “Reactive Facet Tapering of Plasma Oxide for Multilevel Interconnect Applications,” VMIC Conference. pp. 115-121 (1987).
Lee et al., “Dielectric Planarization Techniques for Narrow Pitch Multilevel Interconnects,” VMIC Conference, pp. 85-92 (1987).
Musaka, “Single Step Gap Filling Technology fo Subhalf Micron Metal Spacings on Plasma Enhanced TEOS/O2 Chemical Vapor Deposition System,” International Conference on Solid State Devices and Materials pp. 510-512, held in Japan, (1993).
Qian et al., “High Density Plasma Deposition and Deep Submicron Gap Fill with Low Dielectric Constant SiOF Films,” DUMIC Conference, pp. 50-56, held in California (1995).
Cox Michael Santiago
Ionov Pavel
Krishnaraj Padmanabhan
Lai Canfeng
Shamouilian Shamouil
Applied Materials Inc.
Hiteshew Felisa
Song Matthew J
Townsend and Townsend and Crew
LandOfFree
In situ application of etch back for improved deposition... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with In situ application of etch back for improved deposition..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In situ application of etch back for improved deposition... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3456785