Immersion lithography process and mask layer structure...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S320000, C430S330000

Reexamination Certificate

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07432042

ABSTRACT:
An immersion lithography process is described as follows. A photoresist layer and a protective layer are sequentially formed on a material layer, and then an immersion exposure step is performed to define an exposed portion and an unexposed portion in the photoresist layer. A solubilization step is conducted to solubilize the protective layer on the exposed portion of the photoresist layer, and then a development step is conducted to remove the exposed portion of the photoresist layer and the protective layer thereon. Since the photoresist layer is covered with the protective layer, the chemicals in the photoresist layer do not diffuse into the immersion liquid to cause contamination. The protective layer can be patterned simultaneously in the development step, and no extra step is required to remove the protective layer. Therefore, the whole lithography process is not complicated.

REFERENCES:
patent: 5282066 (1994-01-01), Yu et al.
patent: 6939664 (2005-09-01), Huang et al.
patent: 1152036 (2001-11-01), None

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