High performance transistors with hybrid crystal orientations

Details High performance transistors with hybrid crystal orientations High performance transistors with hybrid crystal orientations

2005-11-17

2009-11-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S150000, C438S154000, C438S221000, C438S222000, C438S404000, C257SE21562

Reexamination Certificate

active

07611937

ABSTRACT:
A method of forming a semiconductor structure having a hybrid crystal orientation and forming MOSFETs having improved performance on the semiconductor structure is provided. The method includes providing a substrate comprising a buried oxide (BOX) on a first semiconductor layer, and a second semiconductor layer on the BOX, wherein the first and second semiconductor layers have a first and a second crystal orientation, respectively, and wherein the substrate comprises a first region and a second region. An isolation structure is formed in the second region extending to the first semiconductor layer. A trench is then formed in the isolation structure, exposing the first semiconductor layer. A semiconductor material is epitaxially grown in the trench. The method further includes forming a MOSFET of a first type on the second semiconductor layer and a MOSFET of an opposite type than the first type on the epitaxially grown semiconductor material.

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