Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-29
2009-12-01
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S275000, C257S351000, C257S371000, C257SE21639, C257SE27067
Reexamination Certificate
active
07625791
ABSTRACT:
A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric. A process for simultaneously forming the NMOS and PMOS gate structures includes forming the high-k gate dielectric material, and the work function tuning layer thereover, then selectively removing the work function tuning layer from the NMOS region and carrying out a plasma treatment to selectively dope the high-k gate dielectric material in the NMOS region with a dopant impurity while the high-k gate dielectric in the PMOS region is substantially free of the dopant impurity.
REFERENCES:
patent: 5763922 (1998-06-01), Chau
patent: 6893924 (2005-05-01), Visokay
patent: 7229893 (2007-06-01), Wang et al.
patent: 2005/0258468 (2005-11-01), Colombo et al.
patent: 2006/0030096 (2006-02-01), Weimer
patent: 2007/0178634 (2007-08-01), Jung et al.
patent: 2007/0272975 (2007-11-01), Schaeffer et al.
patent: 2008/0237604 (2008-10-01), Alshareef et al.
patent: 2008/0261368 (2008-10-01), Ramin et al.
patent: 2008/0274598 (2008-11-01), Ramin et al.
patent: 2008/0277726 (2008-11-01), Doris et al.
Chen Ryan Chia-Jen
Huang Kuo-Tai
Lin Kang-Cheng
Tseng Joshua
Yang Ji-Yi
Duane Morris LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
Taylor Earl N
Vu David
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