Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
Inventor
active
Conformity of ultra-thin nitride deposition for DRAM capacitor
Fabrication method of a tantalum pentoxide dielectric layer for
High-K dielectric metal gate device structure
High-k dielectric metal gate device structure and method for...
Hybrid process for forming metal gates
No associations
LandOfFree
Kuo-Tai Huang does not yet have a rating. At this time, there are no reviews or comments for this inventor.
If you have personal experience with Kuo-Tai Huang, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Kuo-Tai Huang will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-P-197938