High density selective SiO.sub.2 :Si.sub.3 N.sub.4 etching using

Details High density selective SiO.sub.2 :Si.sub.3 N.sub.4 etching using High density selective SiO.sub.2 :Si.sub.3 N.sub.4 etching using

1995-05-08

1997-04-22

McPherson, John A.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438970, 216 39, H01L 2131

Patent

active

056225962

ABSTRACT:
Selectivity of SiO.sub.2 to Si.sub.3 N.sub.4 is increased with the additional of silicon rich nitride conformal layer to manufacturing of semiconductor chip. Silicon rich nitride conformal layer may be used in place of or in addition to standard nitride conformal layers in manufacture.

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patent: 4367119 (1983-01-01), Logan et al.
patent: 4447824 (1984-05-01), Logan et al.
patent: 4543707 (1985-10-01), Ito et al.
patent: 5443998 (1995-08-01), Meyer
patent: 5468987 (1995-11-01), Yamazaki et al.
patent: 5470793 (1995-11-01), Kalnitsky

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