High aspect ratio etch using modulation of RF powers of...

Details High aspect ratio etch using modulation of RF powers of... High aspect ratio etch using modulation of RF powers of...

2006-12-05

2006-12-05

Norton, Nadine (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C156S345420, C216S054000, C216S063000, C216S071000, C438S712000, C438S734000, C257S187000, C257S213000, C427S569000, C427S579000, C427S534000

Reexamination Certificate

active

07144521

ABSTRACT:
A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

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