Heterogeneous group IV semiconductor substrates, integrated...

Details Heterogeneous group IV semiconductor substrates, integrated... Heterogeneous group IV semiconductor substrates, integrated...

2008-09-30

2008-09-30

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S411000, C438S421000, C438S481000

Reexamination Certificate

active

11080737

ABSTRACT:
Embodiments of the present invention include heterogeneous substrates, integrated circuits formed on such heterogeneous substrates, and methods of forming such substrates and integrated circuits. The heterogeneous substrates according to certain embodiments of the present invention include a first Group IV semiconductor layer (e.g., silicon), a second Group IV pattern (e.g., a silicon-germanium pattern) that includes a plurality of individual elements on the first Group IV semiconductor layer, and a third Group IV semiconductor layer (e.g., a silicon epitaxial layer) on the second Group IV pattern and on a plurality of exposed portions of the first Group IV semiconductor layer. The second Group IV pattern may be removed in embodiments of the present invention. In these and other embodiments of the present invention, the third Group IV semiconductor layer may be planarized.

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patent: 7081391 (2006-07-01), Lee et al.
patent: 2004/0155296 (2004-08-01), Kim et al.
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patent: 2001-0076906 (2001-08-01), None
patent: 2003-0091693 (2003-12-01), None

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