Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-04-17
2007-04-17
McDonald, Rodney G. (Department: 1753)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S695000, C438S692000, C438S424000, C438S435000, C427S255230, C427S255280, C427S255370, C216S059000, C216S067000, C216S079000, C156S345240, C156S345330, C156S345480, C118S696000, C118S697000, C118S7230IR, C118S7230IR
Reexamination Certificate
active
10456611
ABSTRACT:
A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.
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Kapoor Bikram
Karim M. Ziaul
Li Dong Qing
Li Zhuang
Ozeki Katsunari
Applied Materials Inc.
McDonald Rodney G.
Townsend and Townsend and Crew
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