HDP-CVD deposition process for filling high aspect ratio gaps

Details HDP-CVD deposition process for filling high aspect ratio gaps HDP-CVD deposition process for filling high aspect ratio gaps

2007-03-27

2007-03-27

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S787000, C438S774000

Reexamination Certificate

active

11095704

ABSTRACT:
A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

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