Hafnium tantalum titanium oxide films

Details Hafnium tantalum titanium oxide films Hafnium tantalum titanium oxide films

2011-08-16

2011-08-16

Ho, Hoang-Quan T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S316000, C257S532000, C257SE29165

Reexamination Certificate

active

07999334

ABSTRACT:
Embodiments of a dielectric layer containing a hafnium tantalum titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. An embodiment may include forming hafnium tantalum titanium oxide film using atomic layer deposition.

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Lu et al. Electrical Properties of Amorphous High-K HfTaTiO Gate Dielectric With Dielectric Constants of 40-60. May 2005. IEEE Electron Device Letters. vol. 26. No. 5. pp. 298-300.
Lu et al. Higher K HfTaTiO gate dielectric with improved material and electrical

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