4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With reflector, opaque mask, or optical element integral...

Toshiaki Chiyo

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Compound semiconductor element based on Group III element...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate

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GaN type semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent

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GaN type semiconductor device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate

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GaN type semiconductor device fabrication

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate

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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Profile ID: LFUS-PAI-P-1273635

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