4. Electric lamp and discharge devices
  5. With luminescent solid or liquid material
  6. Solid-state type

Shinya Asami

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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate

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Group III nitride compound semiconductor device and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate

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Group III nitride compound semiconductor device and method...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate

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Profile ID: LFUS-PAI-P-925765

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