4. Semiconductor device manufacturing: process
  5. Making device or circuit emissive of nonelectrical signal
  6. Compound semiconductor

Shizuyo Asami

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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate

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Group III nitride compound semiconductor device and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate

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Group III nitride compound semiconductor device and method...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2466620

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