Gate structures for flash memory and methods of making same

Details Gate structures for flash memory and methods of making same Gate structures for flash memory and methods of making same

2011-01-11

2011-01-11

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S593000, C438S211000, C257SE21422

Reexamination Certificate

active

07867843

ABSTRACT:
A process may include forming a polysilicon pinnacle above and on a polysilicon island and further forming a floating gate from the polysilicon pinnacle and polysilicon island. The floating gate can bear an inverted T-shape. The floating gate can also be disposed above an isolated semiconductive substrate such as in a shallow-trench isolation semiconductive substrate. Electronic devices may include the floating gate as part of a field effect transistor.

REFERENCES:
patent: 5328810 (1994-07-01), Lowrey et al.
patent: 7153778 (2006-12-01), Busch et al.
patent: 2001/0039107 (2001-11-01), Suguro
patent: 2005/0212034 (2005-09-01), Sasago et al.
patent: 2005/0260859 (2005-11-01), Deshpande et al.
patent: 2006/0172498 (2006-08-01), Yamaguchi et al.
patent: 2006/0211260 (2006-09-01), Tran et al.
patent: 2007/0077780 (2007-04-01), Wang et al.

Affiliated with

Also associated with

Rating

Gate structures for flash memory and methods of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate structures for flash memory and methods of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate structures for flash memory and methods of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2693156