Gate structure and method of forming the gate dielectric...

Details Gate structure and method of forming the gate dielectric... Gate structure and method of forming the gate dielectric...

2005-03-15

2005-03-15

Wilson, Allan R. (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S591000

Reexamination Certificate

active

06867084

ABSTRACT:
A field effect transistor gate structure and a method of fabricating the gate structure with a high-k gate dielectric material and high-k spacer are described. A gate pattern or trench is first etched in a dummy organic or inorganic film deposited over a silicon substrate with source/drain regions. A high-k dielectric material liner is then deposited on all exposed surfaces. Excess poly-silicon gate conductor film is then deposited within and over the trench to provide adequate overburden. Poly-silicon is then planarized with chemical mechanical polishing or etch-back methods such that the high-k material film on top of the dummy film surface is removed during this step. In the final step, the dummy film is disposed off, leaving the final transistor gate structure with high-k gate dielectric and high-k spacer surrounding the gate conductor poly-silicon, with the entire gate structure fabricated to form an FET device on a silicon substrate.

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“Tutorial—Materials for Thin Films / Microelectronics”, 3 pages, www.sigmaaldrich.com/Area_of_Interest/Organic_Inorganic_Chemistry/Materials_Science/Thin_Films_Microelectronics/Tutorial/Dielectric_Materials.html.

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