Gas flow control in a wafer processing system having...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With etchant gas supply or exhaust structure located outside...

Reexamination Certificate

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C156S345310, C156S345320, C156S345330, C156S345340, C118S715000, C118S719000

Reexamination Certificate

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06843882

ABSTRACT:
A system for processing substrates comprises a plurality of process chambers. Each process chamber includes an inlet gas distribution member connected to an inlet gas line to distribute gas from the inlet gas line into the process chamber, and a gas outlet. The inlet gas distribution member has an inlet gas distribution member impedance to a gas flow through the inlet gas distribution member into the process chamber. The plurality of process chambers are substantially identical. A source gas delivery line is connected to the inlet gas lines of the plurality of process chambers to supply a gas flow to be divided into the inlet gas lines. A plurality of tunable upstream gas restrictors are each disposed in one of the inlet gas lines connected to the inlet gas distribution members of the process chambers and are configured to adjust a flow rate into the corresponding process chamber.

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