Gap-filling with uniform properties

Details Gap-filling with uniform properties Gap-filling with uniform properties

2011-02-08

2011-02-08

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C257S634000, C257SE21247, C257SE23118

Reexamination Certificate

active

07884030

ABSTRACT:
During semiconductor fabrication homogeneous gap-filling is achieved by depositing a thin dielectric layer into the gap, post deposition curing, and then repeating deposition and post deposition curing until gap-filling is completed. Embodiments include depositing a layer of low deposition temperature gap-fill dielectric into a high aspect ratio opening, such as a shallow trench or a gap between closely spaced apart gate electrode structures, as at a thickness of about 10 Å to about 500 Å, curing after deposition, as by UV radiation or by heating at a temperature of about 400° C. to about 1000° C., depositing another layer of low deposition temperature gap-filled dielectric, and curing after deposition. Embodiments include separately depositing and separately curing multiple layers.

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